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Emerging resistive switching memories
- 作者: Ouyang, Jianyong, author.
- 其他作者:
- 其他題名:
- SpringerBriefs in materials.
- 出版: Cham : Springer International Publishing :Imprint: Springer
- 叢書名: SpringerBriefs in materials,
- 主題: Nonvolatile random-access memory. , Materials Science. , Nanotechnology. , Electronic Circuits and Devices. , Electronics and Microelectronics, Instrumentation. , Memory Structures.
- ISBN: 9783319315720 (electronic bk.) 、 9783319315706 (paper)
- FIND@SFXID: CGU
- 資料類型: 電子書
- 內容註: Introduction to history of memory devices and the present memory devices -- Introduction of resistive switches memory devices with nanoparticles -- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode -- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode -- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles -- Mechanisms for resistive switches -- Application of the resistive switching devices with nanoparticles.
- 摘要註: This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
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讀者標籤:
- 系統號: 005366579 | 機讀編目格式