資料來源:
三民書局
Doping in III-V semiconductors
- 作者： Schubert, E. Fred.
- 出版： Cambridge [England] ;New York, NY, USA : Cambridge University Press
- 叢書名： Cambridge studies in semiconductor physics and microelectronic engineering1
- 主題： Compound semiconductors , Semiconductor doping
- ISBN： 9780521419192 (hbk) 、 0521419190 (hbk)
- 資料類型: 圖書
- 內容註: Includes bibliographical references (p. 546-599) and index.
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讀者標籤：
- 系統號： 005032995 | 機讀編目格式
館藏資訊
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.