資料來源:
三民書局
Physics of semiconductor devices
- 作者： Sze, S. M., 1936- author.
- 其他作者：
- 出版： Hoboken, NJ : John Wiley & Sons, Inc.
- 版本：Fourth edition.
- 主題： Semiconductors. , Semiconductors , Semi-conducteurs. , semiconductor. , Semiconductors. , Semiconductors.
- ISBN： 9781119429111 (hbk.): US$130.39 、 1119429110 (hbk.)
- 資料類型: 圖書
- 內容註: Includes bibliographical references and index. Part I : Semiconductor physics. Physisand properties of semiconductors -- a review -- Part II : Device building blocks. p-n junctions -- Metal-semiconductor contacts -- Metal-insulator-semiconductor capacitors -- Part III : Transistors. Bipolar transistors -- MOSFETs -- Nonvolatile memory devices -- JFETs, MESFETs, and MODFETs -- Part IV : Negative-resistance and power devices. Tunnel devices -- IMPATT diodes, TED, and RST devices -- Thyristors and power devices -- Part V : Photonic devices and sensors. LEDs and lasers -- Photodetectors and solar cells -- Sensors -- Appendices. A. List of symbols -- B. International system of units -- C. Unit prefixes -- D. Greek alphabet -- E. Physical constants -- F. Properties of important semiconductors -- G. The Boch Theorem and the periodic energy in the reciprocal lattice -- H. Properties of Si and GaAs -- I : The derivations of Boltzmann Transport Equation and hydrodynamic model -- J. Properties of SiOb2s and Sib3sNb4s -- K. Compact models of bipolar transistors -- L. Discovery of the floating-gate memory effect.
- 摘要註: "Since the discovery of the transistor effect in 1947 by a research team at Bell Telephone Laboratories (now Nokia Bell Labs.), the semiconductor-device field has grown rapidly. Coincident with this growth, the semiconductor-device literature has expanded and diversified. For access to this massive amount of information, there is a need for a book giving a comprehensive introductory account of device physics and operational principles, with references. With the intention of meeting such a need, the First, Second and Third Editions of Physics of Semiconductor Devices were published in 1969, 1981 and 2007, respectively. It is perhaps somewhat surprising that the book has so long held its place as one of the main textbooks for advanced undergraduate and graduate students in applied physics, electrical and electronics engineering, and materials science. Because the book includes much useful information on material parameters and device physics, it is also a major reference for engineers and scientists in semiconductor-device research and development. To date, the book is one of the most, if not the most, cited works in contemporary engineering and applied science publications with over 55,000 citations (Google Scholar)"--
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讀者標籤：
- 系統號： 005527493 | 機讀編目格式
館藏資訊
The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.